STP8N80K5, STU8N80K5 دیتاشیت

STP8N80K5, STU8N80K5

مشخصات دیتاشیت

نام دیتاشیت STP8N80K5, STU8N80K5
حجم فایل 1213.81 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت STP8N80K5, STU8N80K5

دانلود دیتاشیت

سایر مستندات

STU8N80K5 16 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STU8N80K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 110W
  • Total Gate Charge (Qg@Vgs): 16.5nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 450pF@100V
  • Continuous Drain Current (Id): 6A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): 1pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,3A
  • Package: TO-251
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH5™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: STU8N
  • detail: N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251

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